1. This space-charge region on either side of the junction which contain only immobile ions and does not have any free charge carrier

2. A diode is said to be in reverse bias when

3. In an unbiased p-n junction, holes diffuses from the p-region to n-region because

4. When a forward bias is applied to a p-n junction, it

5. Movement of minority charge carriers on either side of a juction due to junction field.

6. In the forward bias arrangement of a PN-junction diode

7. Movement of majority charge carriers on either side of the juction due to difference in concentration.

8. The depletion layer in the P-N junction region is caused by

9. The cut-in voltage for silicon diode is approximately

10. In a PN-junction diode

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