1. This space-charge region on either side of the junction which contain only immobile ions and does not have any free charge carrier
2. A diode is said to be in reverse bias when
3. In an unbiased p-n junction, holes diffuses from the p-region to n-region because
4. When a forward bias is applied to a p-n junction, it
5. Movement of minority charge carriers on either side of a juction due to junction field.
6. In the forward bias arrangement of a PN-junction diode
7. Movement of majority charge carriers on either side of the juction due to difference in concentration.
8. The depletion layer in the P-N junction region is caused by
9. The cut-in voltage for silicon diode is approximately
10. In a PN-junction diode