1. The potential difference developed across the junction due to diffusion of majority charge carriers and opposes the further movement of majority charge carriers.
2. The resistance of p-n junction is _________________ when reverse biased.
3. The processes involved in the formation of p-n juction
4. If frequency of applied a.c. is 50 Hz, then output frequency of (i) half wave rectifier (ii) Full wave rectifier is
5. When a forward bias is applied to a p-n junction, it
6. Ideal junction diode acts as a closed switch when forward biased and open switch when reverse biased.
7. The device which is used to convert a.c into d.c
8. characteristic property that makes the junction diode suitable for rectification
9. What happens to the width of depletion layer of a p-n junction (i)on increasing the doping and (ii) on decreasing the doping in a diode
10. Due to forward biasing of a diode