1. The potential difference developed across the junction due to diffusion of majority charge carriers and opposes the further movement of majority charge carriers.
2. Ideal junction diode acts as a closed switch when forward biased and open switch when reverse biased.
3. Due to forward biasing of a diode
4. When a forward bias is applied to a p-n junction, it
5. The resistance of p-n junction is _________________ when reverse biased.
6. What happens to the width of depletion layer of a p-n junction (i)on increasing the doping and (ii) on decreasing the doping in a diode
7. The device which is used to convert a.c into d.c
8. characteristic property that makes the junction diode suitable for rectification
9. The processes involved in the formation of p-n juction
10. If frequency of applied a.c. is 50 Hz, then output frequency of (i) half wave rectifier (ii) Full wave rectifier is